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march 2017 docid025171 rev 7 1 / 21 this is information on a product in full production. www.st.com stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65fb trench gate field - stop igbt, hb series 650 v, 40 a high speed datasheet - production data figure 1 : internal schematic diagram features ? maximum junction temperature: t j = 175 c ? high speed switching series ? minimized tail current ? very low saturation voltage: v ce(sat) = 1.6 v (typ) @ i c = 40 a ? safe paralleling ? tight parameter distribu tion ? low thermal resistance applications ? photovoltaic inverters ? high frequency converters description these devices are igbts developed using an advanced proprietary trench gate field - stop structure. these devices are part of the new hb series of igbts, which represent an optimum compromise between conduction and switching los s to maximize the efficiency of any frequency converter. furthermore, the slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. table 1: device summary order code marking package packing stgfw40h65fb gfw40h65fb to - 3pf tube STGW40H65FB gw40h65fb to - 247 tube stgwa40h65fb gwa40h65fb to - 247 long leads tube stgwt40h65fb gwt40h65fb to - 3p tube g(1) c(2, t ab) e(3) g1c2te3 1 2 3 t o-3p t ab t o-247 1 2 3 1 2 3 t o-3pf t o-247 long leads 1 2 3
contents stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65fb 2 / 21 docid025171 rev 7 cont ents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ................... 11 4 package information ................................ ................................ ..... 12 4.1 to - 3pf package information ................................ .......................... 12 4.2 to - 247 package information ................................ ........................... 14 4.3 to - 247 long leads package informat ion ................................ ......... 16 4.4 to - 3p package information ................................ ............................ 18 5 revision history ................................ ................................ ............ 20
stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65fb electrical ratings docid025171 rev 7 3 / 21 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit to - 247, to - 247 long leads, to - 3p to - 3pf v ces collector - emitter voltage (v ge = 0 v) 650 v i c continuous collecto r current at t c = 25 c 80 a continuous collector current at t c = 100 c 40 i cp (1) pulsed collector current 160 a v ge gate - emitter voltage 20 v p tot total dissipation at t c = 25 c 283 62.5 w v iso insulation withst and voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 3.5 kv t stg storage temperature range - 55 to 150 c t j operating junction temperature range - 55 to 175 c notes: (1) pulse width is limited by maximum junction temperatu re. table 3: thermal data symbol parameter value unit to - 247, to - 247 long leads, to - 3p to - 3pf r thjc thermal resistance junction - case 0.53 2.4 c/w r thja thermal resistance junction - ambient 50 c/w
electrical characteristics stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65f b 4 / 21 docid025171 rev 7 2 electrical characteristics t c = 25 c unless otherwise specified table 4: static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector - emitter breakdown voltage v ge = 0 v, i c = 2 ma 650 v v ce(sat) collector - emitter saturation voltage v ge = 15 v, i c = 40 a 1.6 2 v v ge = 15 v, i c = 40 a, t j = 125 c 1.7 v ge = 15 v, i c = 40 a, t j = 175 c 1.8 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces coll ector cut - off current v ge = 0 v, v ce = 650 v 25 a i ges gate - emitter leakage current v ce = 0 v, v ge = 20 v 250 na table 5: dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 v - 5412 - pf c oes output capacitance - 198 - c res reverse transfer capacitance - 107 - q g total gate charge v cc = 520 v, i c = 40 a, v ge = 0 to 15 v (see figure 28: "gate charge test circuit" ) - 210 - nc q ge gate - emitter charge - 39 - q gc gate - collector charge - 82 -
stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65fb electrical characteristics docid025171 rev 7 5 / 21 table 6: switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v ce = 400 v, i c = 40 a, v ge = 15 v, r g = 5 (see figure 27: "test circuit for inductive load switching" ) - 40 - ns t r current rise time - 13 - (di/dt) on turn - on current slope - 2413 - a/s t d(off) turn - off delay time - 142 - ns t f current fall time - 27 - e on (1) turn - on switching energy - 498 - j e off (2) turn - off switching energy - 363 - e ts total switching energy - 861 - t d(on) turn - on delay time v ce = 400 v, i c = 40 a, v g e = 15 v, r g = 5 , t j = 175 c (see figure 27: "test circuit for inductive load switching" ) - 38 - ns t r current rise time - 14 - (di/dt) on turn - on current slope - 2186 - a/s t d(off) turn - off delay time - 141 - ns t f curren t fall time - 61 - e on (1) turn - on switching energy - 1417 - j e off (2) turn - off switching energy - 764 - e ts total switching energy - 2181 - notes: (1) including the reverse rec overy of the external diode. the diode is the same of the co - packed stgw40h65dfb. (2) including the tail of the collector current.
electrical characteristics stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65f b 6 / 21 docid025171 rev 7 2.1 electrical characteristics (curves) figure 2 : power dissipation vs. case temperature for to - 247, to - 247 long leads and to - 3p figure 3 : collector current vs. case temperature for to - 247, to - 247 long leads and to - 3p figu re 4 : power dissipation vs. case temperature for to - 3pf figure 5 : collector current vs. case temperature for to - 3pf figure 6 : output characteristics (t j = 25 c) figure 7 : output characteristics (t j = 175 c)
stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65fb electrical characteristics docid025171 rev 7 7 / 21 figure 8 : v ce(sat) vs. junction temperature figure 9 : v ce(sat) vs. collector current figure 10 : collector curr ent vs. switching frequency for to - 247,to - 247 long leads and to - 3p figure 11 : collector current vs. switching frequency for to - 3pf figure 12 : forward bias safe operating area for to - 247, to - 247 long leads and to - 3p figure 13 : forward bias safe operating area for to - 3pf
electrical characteristics stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65f b 8 / 21 docid025171 rev 7 figure 14 : transfer characteristics figure 15 : normalized v ge(th) vs. junction te mperature figure 16 : normalized v (br)ces vs. junction temperature figure 17 : capacitance variation figure 18 : gate charge vs. gate - emitter voltage figure 19 : switching energy vs. collector current
stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65fb electrical characteristics docid025171 rev 7 9 / 21 figure 20 : switching energy vs. gate resistance figure 21 : switching energy vs. temperature figure 22 : switching energ y vs. collector emitter voltage figure 23 : switching times vs. collector current figure 24 : switching times vs. gate resistance
electrical characteristics stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65f b 10 / 21 docid025171 rev 7 figure 25 : thermal impedance for to - 247, to - 247 long leads and to - 3p figure 26 : thermal impedance for to - 3pf 10 -5 10 -4 10 -3 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c d =tp/t tp t single pulse d =0.5 10 -2 10 -1 10 zth t of3t_ a
stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65fb test circuits docid025171 rev 7 11 / 21 3 test circuits figure 27 : test circuit for induc tive load switching figure 28 : gate charge test circuit figure 29 : switching waveform a a c e g b r g + - g c 3 . 3 f 1 0 0 0 f l = 1 00 h v cc e d . u . t b a m 0 15 0 4 v 1
package information stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65f b 12 / 21 docid025171 rev 7 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? i s an st trademark. 4.1 to - 3pf package information figure 30 : to - 3pf package outline
stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65fb package information docid025171 rev 7 13 / 21 table 7: to - 3pf mechanical data dim. mm min. typ. max. a 5. 30 5.70 c 2.80 3.20 d 3.10 3.50 d1 1.80 2.20 e 0.80 1.10 f 0.65 0.95 f2 1.80 2.20 g 10.30 11.50 g1 5.45 h 15.30 15.70 l 9.80 10 10.20 l2 22.80 23.20 l3 26.30 26.70 l4 43.20 44.40 l5 4.30 4.70 l6 24.30 24.70 l7 14.60 15 n 1 .80 2.20 r 3.80 4.20 dia 3.40 3.80
package information stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65f b 14 / 21 docid025171 rev 7 4.2 to - 247 package information figure 31 : to - 247 package outline 0075325_8
stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65fb package information docid025171 rev 7 15 / 21 table 8: to - 247 package mechanical data dim. mm min. ty p. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ?p 3.55 3.65 ?r 4.50 5.50 s 5.30 5.50 5.70
package information stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65f b 16 / 21 docid025171 rev 7 4.3 to - 247 long leads pac kage information figure 32 : to - 247 long leads package outline
stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65fb package information docid025171 rev 7 17 / 21 table 9: to - 247 long leads package mechanical data dim. mm min. typ. max. a 4.90 5.0 0 5.10 a1 2.31 2.41 2.51 a2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 d 20.90 21.00 21.10 e 15.70 15.80 15.90 e2 4.90 5.00 5.10 e3 2.40 2.50 2.60 e 5.34 5.44 5.54 l 19.80 19.92 20.10 l1 4.30 p 3.50 3.60 3.70 q 5.60 6.00 s 6.05 6.15 6.25
package information stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65f b 18 / 21 docid025171 rev 7 4.4 to - 3p package information figure 33 : to - 3p package outline
stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65fb package information docid025171 rev 7 19 / 21 table 10: to - 3p package mechanical data dim. mm min. typ. max. a 4.60 4.80 5.00 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b 0.80 1.00 1.20 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.55 0.60 0.75 d 19.70 19.90 20.10 d1 13.70 13.90 14.10 e 15.40 15.60 15.80 e1 13.40 13.60 13.80 e2 9.40 9.60 9.90 e 5.15 5.45 5.75 l 19.80 20.00 20.20 l1 3.30 3.50 3.70 l2 18.20 18.40 18.60 ?p 3.30 3.40 3.50 ?p1 3.10 3.20 3.30 q 4.80 5.00 5.20 q1 3.60 3.80 4
revision history stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65f b 20 / 21 docid025171 rev 7 5 revision history table 11: document revision history date revision changes 30 - aug - 2013 1 initial release 11 - sep - 2013 2 document status changed from preliminary to production data. inserted section 2.1: electrical characteristics (curves) . 28 - feb - 2014 3 updated title and description in co ver page. 05 - mar - 2014 4 updated units in table 6: switching characteristics (inductive load) . 11 - apr - 2014 5 added part number and references for the device in a to - 3pf package. 03 - nov - 2016 6 added device in to - 247 long leads and updated the document acc ordingly. updated section 2.1: electrical characteristics (curves) and section 4.3: to - 247 long leads, package information . minor text changes. 21 - mar - 2017 7 updated table 1: "device summary" . added figure 26: "thermal impedance for to - 3pf" . minor text changes
stgfw40h65fb, STGW40H65FB, stgwa40h65fb, stgwt40h65fb docid025171 rev 7 21 / 21 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st prod ucts are sold pursuant to sts terms and conditions of sale in place at the time of order acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for applicati on assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st f or such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this do cument. ? 2017 stmicroelectronics C all rights reserved

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